Modification of power diode characteristics using bremsstrahlung radiation from microtron

Ganesh, K. C. Prashanth, Y. N. Nagesha, A. P. Gnana Prakash, Umakanth Dammalapati, Manjunatha Pattabi, K. Siddappa, Saji Salkalachen, Amitav Roy

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Irradiation of semiconductors to energetic electrons/photons plays a vital role in modifying the electrical characteristics and in controlling the carrier life time effectively by creating lattice defects. Photon irradiation effects on silicon power diodes were studied by using bremsstrahlung radiation of peak energy 8 MeV from the Variable Energy Microtron. The relevant electrical characteristics of the diodes at different voltages were measured after irradiating to different doses. The present studies indicate that the bremsstrahlung irradiation modifies the characteristics of the high power diodes.

Original languageEnglish
Pages (from-to)461-464
Number of pages4
JournalRadiation Physics and Chemistry
Volume55
Issue number4
DOIs
Publication statusPublished - 1999 Jul 11

Keywords

  • Bremsstrahlung
  • Irradiation
  • Microtron
  • Power diode characteristics

ASJC Scopus subject areas

  • Radiation

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