TY - JOUR
T1 - Modification of magnetic nanocontact structure by a bias-voltage-induced stress and its influence on magnetoresistance effect in TaO x nano-oxide layer spin valve
AU - Miyake, Kousaku
AU - Saki, Yosinobu
AU - Suzuki, Ayako
AU - Kawasaki, Shohei
AU - Doi, Masaaki
AU - Sahashi, Masashi
PY - 2012/6
Y1 - 2012/6
N2 - A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaO x nano-oxide layer (NOL) as the spacer layer. Currentperpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.
AB - A magnetic nanocontact spin valve (NCSV) was fabricated by inserting a TaO x nano-oxide layer (NOL) as the spacer layer. Currentperpendicular-to-film-plane (CPP) measurements revealed that the SV had a positive magnetoresistance (MR) ratio. When a high bias voltage was applied to the SV, the fine structure of the NOL changed i.e., the resistance and MR ratio of the device changed irreversibly. The change in device characteristics is attributed to a proportional change in the number of nonmagnetoresistive and magnetoresistive conductive channels in the SV upon high bias voltage application. The decrease in MR ratio accompanied the disappearance of the magnetic nanocontact, suggesting that the positive MR effect was partially due to the presence of magnetic nanocontacts.
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U2 - 10.1143/JJAP.51.063002
DO - 10.1143/JJAP.51.063002
M3 - Article
AN - SCOPUS:84863317940
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 PART 1
M1 - 063002
ER -