Modification of double-walled carbon nanotubes by Cs plasma ion irradiation

Yongfeng Li, Takeshi Izumida, Takeru Okada, Toshiaki Kato, Rikizo Hatakeyama, Jieshan Qiu

Research output: Contribution to journalArticle

Abstract

The synthesis of Cs-encapsulated double-walled carbon nanotubes (DWNTs) is realized for the first time by plasma irradiation. Transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) spectrometry confirm that Cs clusters can be doped inside DWNTs. The structural deformation of Cs-encapsulated DWNTs synthesized under different applied negative DC bias voltages from -25 to -150V during plasma irradiation is examined by Raman spectroscopy, and the obtained results indicate that DWNTs have structural merits compared with single-walled carbon nanotubes (SWNTs). In addition, the electronic transport properties of pristine and Cs-encapsulated DWNTs are investigated by their fabrication as the channels of field-effect transistor (FET) devices. We find that, in contrast to pristine ambipolar DWNTs, unipolar n-type semiconducting DWNTs can be created by Cs plasma irradiation.

Original languageEnglish
Pages (from-to)8330-8334
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 B
DOIs
Publication statusPublished - 2006 Oct 21

Keywords

  • Alkali metals
  • Double-walled carbon nanotubes
  • Electronic transport properties
  • Encapsulation
  • Plasma applications

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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