Modification and control of topological insulator surface states using surface disorder

Vincent Sacksteder, Tomi Ohtsuki, Koji Kobayashi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three-dimensional topological insulator, by introducing strong disorder in a layer of depth d extending inward from the surface of the topological insulator. The dependence on d of the density of states, conductance, scattering time, scattering length, diffusion constant, and mean Fermi velocity are investigated. The proposed control via disorder depth d requires that the disorder strength be near the large value which is necessary to drive the topological insulator into the nontopological phase. If d is patterned using masks, gates, ion implantation, etc., then integrated circuits may be fabricated. This technique will be useful for experiments and for device engineering.

Original languageEnglish
Article number064006
JournalPhysical Review Applied
Volume3
Issue number6
DOIs
Publication statusPublished - 2015 Jun 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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