Moderate kink effect in fully depleted thin-film SOI MOSFETs

F. Balestra, T. Matsumoto, M. Koyanagi, M. Tsuno, H. Nakabayashi, Y. Inoue, F. Balestra

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Abstract

Floating body effects are investigated in thin-film SOI MOSFETs. It is shown that a moderate kink effect can be obtained for fully depleted SOI devices with intermediate Si layer thicknesses. This moderate kink is due to the significant potential barrier height of the source/thin film diode, which can be modulated by the additional forward bias induced by the impact ionisation current, for these moderately fully depleted devices. Various substrate and body biases are applied in order to analyse the transition from partial depletion to strong full depletion regimes.

Original languageEnglish
Pages (from-to)326-327
Number of pages2
JournalElectronics Letters
Volume31
Issue number4
DOIs
Publication statusPublished - 1995 Feb 16

Keywords

  • MOSFETs
  • Silicon-on-insulator
  • Thin film transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Balestra, F., Matsumoto, T., Koyanagi, M., Tsuno, M., Nakabayashi, H., Inoue, Y., & Balestra, F. (1995). Moderate kink effect in fully depleted thin-film SOI MOSFETs. Electronics Letters, 31(4), 326-327. https://doi.org/10.1049/el:19950222