TY - GEN
T1 - Models of terahertz and infrared devices based on graphene/ black-Asp heterostructures
AU - Ryzhii, M.
AU - Otsuji, T.
AU - Ryzhii, V.
AU - Leiman, V.
AU - Mitin, V.
AU - Shur, M. S.
N1 - Funding Information:
The work was supported by the Japan Society for Promotion of Science, KAKENHI Grant No. 16H06361, RIEC Nation-Wide Collaborative Research Project, and by the Office of Naval Research (Project Monitor Dr. Paul Maki).
Publisher Copyright:
© 2019 Dime Universita di Genova, DIMEG University of Calabria.
PY - 2019
Y1 - 2019
N2 - The gapless energy spectrum of the graphene layers (GLs) enables the interband absorption and emission of photons and plasmons in the terahertz (THz) and infrared (IR) spectral range. The energy of the emerging the black-phosphorus (b-P), black-arsenic (b-As), and the compounds (b-AsxP1-x) varies from 0.15 to 1.7 eV, depending on the number of the atomic sheets and the component relative content. Due to a strong anisotropy of the b-P and b-As, the ratios of the carrier effective masses in different in-plain directions are very large. One of the crucial properties of the GL heterostructures with the b-P, b-As, and b-AsxP1-x barrier layers are associated with the GL Dirac point corresponding to the energy gap in the barriers. Combination of GLs with the b-P, b-As, and b-AsxP1-x layers opens new prospects for the novel THz and IR devices, in particular, GL-based photodetectors, electro-optical modulators, and sources of THz/IR radiation, including the lasers with the GL active region.
AB - The gapless energy spectrum of the graphene layers (GLs) enables the interband absorption and emission of photons and plasmons in the terahertz (THz) and infrared (IR) spectral range. The energy of the emerging the black-phosphorus (b-P), black-arsenic (b-As), and the compounds (b-AsxP1-x) varies from 0.15 to 1.7 eV, depending on the number of the atomic sheets and the component relative content. Due to a strong anisotropy of the b-P and b-As, the ratios of the carrier effective masses in different in-plain directions are very large. One of the crucial properties of the GL heterostructures with the b-P, b-As, and b-AsxP1-x barrier layers are associated with the GL Dirac point corresponding to the energy gap in the barriers. Combination of GLs with the b-P, b-As, and b-AsxP1-x layers opens new prospects for the novel THz and IR devices, in particular, GL-based photodetectors, electro-optical modulators, and sources of THz/IR radiation, including the lasers with the GL active region.
KW - Black-arsenic
KW - Black-phosphorus
KW - Graphene
KW - Heterostructure
KW - Infrared
KW - Terahertz
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M3 - Conference contribution
AN - SCOPUS:85073794567
T3 - 31st European Modeling and Simulation Symposium, EMSS 2019
SP - 237
EP - 240
BT - 31st European Modeling and Simulation Symposium, EMSS 2019
A2 - Affenzeller, Michael
A2 - Bruzzone, Agostino G.
A2 - Longo, Francesco
A2 - Pereira, Guilherme
PB - Dime University of Genoa
T2 - 31st European Modeling and Simulation Symposium, EMSS 2019
Y2 - 18 September 2019 through 20 September 2019
ER -