Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions

Maxim Ryzhii; Victor Ryzhii; Akira Satou; Taiichi Otsuji; Vladimir Mitin; Michael S. Shur

doi:10.1109/SISPAD.2016.7605221

Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions

Maxim Ryzhii, Victor Ryzhii, Akira Satou, Taiichi Otsuji, Vladimir Mitin, Michael S. Shur

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose and analyze the resonant plasmonic terahertz detectors based on the split-gate field-effect transistors with electrically induced p-n junctions and graphene and perforated graphene channels. The perforation of the p-n junction depletion region leads to the tunneling suppression and the substantial reinforcement of the detector resonant response.

Original language	English
Title of host publication	2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
Editors	Peter Pichler, Eberhard Bar, Jurgen Lorenz
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	361-364
Number of pages	4
ISBN (Electronic)	9781509008179
DOIs	https://doi.org/10.1109/SISPAD.2016.7605221
Publication status	Published - 2016 Oct 20
Event	2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany Duration: 2016 Sep 6 → 2016 Sep 8

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other	2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
Country	Germany
City	Nuremberg
Period	16/9/6 → 16/9/8

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2016.7605221

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Cite this

Ryzhii, M., Ryzhii, V., Satou, A., Otsuji, T., Mitin, V., & Shur, M. S. (2016). Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions. In P. Pichler, E. Bar, & J. Lorenz (Eds.), 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 (pp. 361-364). [7605221] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2016.7605221

Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions. / Ryzhii, Maxim; Ryzhii, Victor; Satou, Akira ; Otsuji, Taiichi; Mitin, Vladimir; Shur, Michael S.

2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. ed. / Peter Pichler; Eberhard Bar; Jurgen Lorenz. Institute of Electrical and Electronics Engineers Inc., 2016. p. 361-364 7605221 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ryzhii, M, Ryzhii, V, Satou, A , Otsuji, T, Mitin, V & Shur, MS 2016, Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions. in P Pichler, E Bar & J Lorenz (eds), 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016., 7605221, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 361-364, 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016, Nuremberg, Germany, 16/9/6. https://doi.org/10.1109/SISPAD.2016.7605221

Ryzhii M, Ryzhii V, Satou A , Otsuji T, Mitin V, Shur MS. Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions. In Pichler P, Bar E, Lorenz J, editors, 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 361-364. 7605221. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2016.7605221

Ryzhii, Maxim ; Ryzhii, Victor ; Satou, Akira ; Otsuji, Taiichi ; Mitin, Vladimir ; Shur, Michael S. / Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions. 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. editor / Peter Pichler ; Eberhard Bar ; Jurgen Lorenz. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 361-364 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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