Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions

Maxim Ryzhii, Victor Ryzhii, Akira Satou, Taiichi Otsuji, Vladimir Mitin, Michael S. Shur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose and analyze the resonant plasmonic terahertz detectors based on the split-gate field-effect transistors with electrically induced p-n junctions and graphene and perforated graphene channels. The perforation of the p-n junction depletion region leads to the tunneling suppression and the substantial reinforcement of the detector resonant response.

Original languageEnglish
Title of host publication2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
EditorsPeter Pichler, Eberhard Bar, Jurgen Lorenz
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages361-364
Number of pages4
ISBN (Electronic)9781509008179
DOIs
Publication statusPublished - 2016 Oct 20
Event2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
Duration: 2016 Sep 62016 Sep 8

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
CountryGermany
CityNuremberg
Period16/9/616/9/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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