Modelling of impact ionization current for LDD SOI MOSFETs

S. Pidin, T. Matsumoto, N. Terao, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impact ionization phenomenon in submicron LDD SOI MOSFETs is investigated using devices with body terminals. It is shown that in order to accurately model the impact ionization current for submicron LDD SOI MOSFETs, it is necessary to account for the voltage drop on the parasitic source-and-drain series resistances and for the gate-voltage dependent saturation field in the expression for the maximum channel electric field Em. It is demonstrated that the plot of IIMP/(IDEm) versus 1/Emis a single straight line for a given technology. In addition, method to extract the effective length of the saturation region is developed and extrapolation for shorter channel length devices is made.

Original languageEnglish
Title of host publicationESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
EditorsHenk C. de Graaff, Henk C. de Graaff, Herma van Kranenburg
PublisherIEEE Computer Society
Pages393-396
Number of pages4
ISBN (Electronic)286332182X
ISBN (Print)9782863321829
Publication statusPublished - 1995 Jan 1
Event25th European Solid State Device Research Conference, ESSDERC 1995 - The Hague, Netherlands
Duration: 1995 Sep 251995 Sep 27

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other25th European Solid State Device Research Conference, ESSDERC 1995
CountryNetherlands
CityThe Hague
Period95/9/2595/9/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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