Modeling of vibrating-body field-effect transistors based on the electromechanical interactions between the gate and the channel

Shinji Ueki, Yuki Nishimori, Hiroshi Imamoto, Tomohiro Kubota, Kuniyuki Kakushima, Tsuyoshi Ikehara, Masakazu Sugiyama, Seiji Samukawa, Gen Hashiguchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A coupled analysis method for the mechanical and electrical systems of vibrating-body field-effect transistors (VB-FETs) is described. To accommodate energy transfer between the gate and the FET channel, we represent the FET with a resistance–capacitance ladder circuit and use the Lagrange function to derive motion equations. By solving the equations, we derive the typical electrical characteristics of VB-FETs, namely, the transconductance and the current gain. The results show that the current gain is obtained even above the cutoff frequency of the FET at the antiresonance frequency of the mechanical vibrator. These characteristics strongly depend on the device dimensions and operating conditions. This means that a coupled analysis is helpful for determining an appropriate design of VB-FETs.

Original languageEnglish
Article number6230648
Pages (from-to)2235-2242
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
Publication statusPublished - 2012

Keywords

  • Metal–oxide–silicon field-effect transistors (MOSFETs)
  • Microelectromechanical systems
  • Parallel-plate actuators
  • —Equivalent circuits

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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