Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We propose a simple numerical model for incorporation of oxygen and carbon impurities into multicrystalline Si during one-directional crystal growth in comparison with experimental results. The model includes parameters that are oxygen and carbon concentrations in the melt in the beginning of the growth, carbon flux form the atmosphere, oxygen fluxes from the crucible and to the atmosphere. Variation of oxygen and carbon concentrations in multicrystalline Si ingots with a diameter of 30 cm and a height of 7.5 cm solidified one-directionally was measured by infra red absorption spectroscopy at room temperature. By fitting the numerical results on the experimental results, the parameters were evaluated. In the modeling we found fruitful suggestions for suppressing and controlling the oxygen and carbon concentrations in multicrystalline Si for solar cells.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalJournal of Crystal Growth
Volume352
Issue number1
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • A1. Computer simulation
  • A1. Directional solidification
  • A1. Impurities
  • A2. Growth from melt
  • B2. Semiconducting silicon
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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