To dynamically model the grown-in dislocation multiplication on prismatic slip planes for GaN single crystal growth, the Alexander-Haasen (AH) model, which was originally used to model the plastic deformation of silicon crystals, is extended to GaN single crystals. By fitting the model to the experimental data, we found that it can accurately describe the plastic deformation of GaN caused by prismatic slip. A set of unified parameters for the AH model at different temperatures can be found. This model provides a possible method to minimize grown-in dislocations caused due to prismatic slip by optimizing growing and cooling conditions during GaN single crystal growth.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2015 Jan 21|
ASJC Scopus subject areas
- Physics and Astronomy(all)