Abstract
A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, calibrated with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multi-fin devices, by comparing against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures which are critical for improving circuit performance and EOS/ESD reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations.
Original language | English |
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Article number | 4418895 |
Pages (from-to) | 177-180 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Externally published | Yes |
Event | 2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry