Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance

Seshadri Kolluri; Kazuhiko Endo; Eiichi Suzuki; Kaustav Banerjee

doi:10.1109/IEDM.2007.4418895

Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance

Seshadri Kolluri, Kazuhiko Endo, Eiichi Suzuki, Kaustav Banerjee

Research output: Contribution to journal › Conference article › peer-review

41 Citations (Scopus)

Abstract

A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, calibrated with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multi-fin devices, by comparing against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures which are critical for improving circuit performance and EOS/ESD reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations.

Original language	English
Article number	4418895
Pages (from-to)	177-180
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418895
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4418895

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title = "Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance",

abstract = "A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, calibrated with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multi-fin devices, by comparing against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures which are critical for improving circuit performance and EOS/ESD reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations.",

author = "Seshadri Kolluri and Kazuhiko Endo and Eiichi Suzuki and Kaustav Banerjee",

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AU - Endo, Kazuhiko

AU - Suzuki, Eiichi

AU - Banerjee, Kaustav

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A rigorous analytical thermal model has been formulated for the analysis of self-heating effects in FinFETs, under both steady-state and transient stress conditions. 3-D self-consistent electrothermal simulations, calibrated with experimentally measured electrical characteristics, were used to understand the nature of self-heating in FinFETs and calibrate the proposed model. The accuracy of the model has been demonstrated for a wide range of multi-fin devices, by comparing against finite element simulations. The model has been applied to carry out a detailed sensitivity analysis of self-heating with respect to various FinFET parameters and structures which are critical for improving circuit performance and EOS/ESD reliability. The transient model has been used to estimate the thermal time constants of these devices and predict the sensitivity of power-to-failure to various device parameters, for both long and short pulse ESD situations.

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Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance

Abstract

ASJC Scopus subject areas

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