Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

Maki Suemitsu, Yoshiharu Enta, Youichi Takegawa, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.

Original languageEnglish
Pages (from-to)3179-3181
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number20
DOIs
Publication statusPublished - 2000 Nov 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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