Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

Maki Suemitsu; Yoshiharu Enta; Youichi Takegawa; Nobuo Miyamoto

doi:10.1063/1.1326037

Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

Maki Suemitsu, Yoshiharu Enta, Youichi Takegawa, Nobuo Miyamoto

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Abstract

Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.

Original language	English
Pages (from-to)	3179-3181
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	20
DOIs	https://doi.org/10.1063/1.1326037
Publication status	Published - 2000 Nov 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1326037

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abstract = "Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.",

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T1 - Mode transition between growth and decomposition of oxides on Si(001)

T2 - Kinetically determined critical coverage for oxidation

AU - Suemitsu, Maki

AU - Enta, Yoshiharu

AU - Takegawa, Youichi

AU - Miyamoto, Nobuo

PY - 2000/11/13

Y1 - 2000/11/13

N2 - Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.

AB - Effects of preoxidation on the reaction kinetics of oxygen molecules at Si(001) surface have been investigated by real-time ultraviolet photoelectron spectroscopy. A mode transition from decomposition to growth of surface oxides was found to exist at a certain initial oxide coverage, which is kinetically, not energetically, determined. By considering a change of balance between Si adatom and oxygen-monomer fluxes at the perimeter of oxide clusters, this mode transition is quantitatively described as a bifurcation of an autocatalytic-reaction rate equation.

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JF - Applied Physics Letters

SN - 0003-6951

IS - 20

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Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

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