Mode locking of a GaInN semiconductor laser with an internal saturable absorber

Masahiro Yoshita, Masaru Kuramoto, Masao Ikeda, Hiroyuki Yokoyama

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser diode with an internal saturable absorber layer for the first time. Stable passive mode locking was confirmed at a repetition rate of 840 MHz. Furthermore, hybrid mode-locking operation incorporating rf current modulation generated optical pulses of 20 ps duration and 0.4 W peak power.

Original languageEnglish
Article number061104
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
Publication statusPublished - 2009 Feb 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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