TY - JOUR
T1 - Mode behavior improvement in dfb lds by light phase control at the facet
AU - Matsuoka, Takashi
AU - Nagai, Haruo
AU - Suzuki, Yoshio
AU - Noguchi, Yoshio
AU - Wakita, Ko Ichi
PY - 1984/10
Y1 - 1984/10
N2 - Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.
AB - Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.
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U2 - 10.1143/JJAP.23.L782
DO - 10.1143/JJAP.23.L782
M3 - Article
AN - SCOPUS:0021502152
VL - 23
SP - L782-L784
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -