Mode behavior improvement in dfb lds by light phase control at the facet

Takashi Matsuoka; Haruo Nagai; Yoshio Suzuki; Yoshio Noguchi; Ko Ichi Wakita

doi:10.1143/JJAP.23.L782

Mode behavior improvement in dfb lds by light phase control at the facet

Takashi Matsuoka, Haruo Nagai, Yoshio Suzuki, Yoshio Noguchi, Ko Ichi Wakita

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.

Original language	English
Pages (from-to)	L782-L784
Journal	Japanese journal of applied physics
Volume	23
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.23.L782
Publication status	Published - 1984 Oct
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.",

author = "Takashi Matsuoka and Haruo Nagai and Yoshio Suzuki and Yoshio Noguchi and Wakita, {Ko Ichi}",

year = "1984",

month = oct,

doi = "10.1143/JJAP.23.L782",

language = "English",

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T1 - Mode behavior improvement in dfb lds by light phase control at the facet

AU - Matsuoka, Takashi

AU - Nagai, Haruo

AU - Suzuki, Yoshio

AU - Noguchi, Yoshio

AU - Wakita, Ko Ichi

PY - 1984/10

Y1 - 1984/10

N2 - Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.

AB - Lasing characteristics of InP/InGaAsP DFB-BH LDs, which show a two longitudinal mode operation on both sides of the stop band in as-fabricated state, have been remarkably improved and made into a single longitudinal mode operation by shifting the light phase about π/4 at the facet. The light phase was shifted by changing the relative position of the cleaved facet and the grating. Ion beam etching and dielectric film coating were successfully applied for this purpose.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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