The mobility enhancement in strained Si modulation-doped (MOD) structure formed on the strain-relaxed SiGe buffer layer planarized by chemical mechanical polishing (CMP) was studied. It was found that at low temperatures, the enhancement reached a factor of 6. Results showed that the roughness scattering was reduced and the mobility of two-dimensional electron gas in the strained Si was increased by CMP.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)