Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing

K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, K. Nakagawa

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    28 Citations (Scopus)

    Abstract

    The mobility enhancement in strained Si modulation-doped (MOD) structure formed on the strain-relaxed SiGe buffer layer planarized by chemical mechanical polishing (CMP) was studied. It was found that at low temperatures, the enhancement reached a factor of 6. Results showed that the roughness scattering was reduced and the mobility of two-dimensional electron gas in the strained Si was increased by CMP.

    Original languageEnglish
    Pages (from-to)412-414
    Number of pages3
    JournalApplied Physics Letters
    Volume82
    Issue number3
    DOIs
    Publication statusPublished - 2003 Jan 20

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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