Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells

T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, H. Ohno

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

We have measured electron spin relaxation time (τe) in undoped and n-type InGaAs/InAlAs quantum wells (QWs) as a function of electron quantized energy (E1e) and electron mobility (μ) at room temperature. For E1e dependence, the trend can be explained either by the D'yakonov-Perel' (DP) theory or by the Elliott-Yafet (EY) theory. On the other hand, it is difficult to explain the complex μ-dependence of τe by either of the theories. Our experimental results suggest that further improvement of the theories might be necessary to fully explain the relaxation mechanism in InGaAs QWs.

Original languageEnglish
Pages (from-to)1015-1019
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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