Mobility degradation analysis for la2O3 nmosfet

Jin Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Takeo Hattori, Kazuo Tsutsui, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Al/La2O3/SiO2/p-Si nMOSFET with various thicknesses of the La2O3 layer and the SiO2 interfacial layer (IL) were fabricated. We discussed mobility degradation caused by fixed charge and trapped charge at the La2O3/SiO 2 interface. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages329-338
Number of pages10
Edition1
Publication statusPublished - 2006
Externally publishedYes
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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