Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

Original languageEnglish
Article number065001
JournalJournal of Physics D: Applied Physics
Volume51
Issue number6
DOIs
Publication statusPublished - 2018 Jan 19

Keywords

  • Heusler alloy
  • antiferromagnetism
  • exchange bias

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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