Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tomoki Tsuchiya; Ryota Kobayashi; Takahide Kubota; Kotaro Saito; Kanta Ono; Takashi Ohhara; Akiko Nakao; Koki Takanashi

doi:10.1088/1361-6463/aaa41a

Mn₂VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Mn₂VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L2₁-type Mn₂VAl order was controlled by the deposition temperature. A2-type Mn₂VAl films showed no spontaneous magnetization, while L2₁-type Mn₂VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm^-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn₂VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn₂VAl and Fe showed an exchange bias of 120 Oe at 10 K.

Original language	English
Article number	065001
Journal	Journal of Physics D: Applied Physics
Volume	51
Issue number	6
DOIs	https://doi.org/10.1088/1361-6463/aaa41a
Publication status	Published - 2018 Jan 19

Keywords

Heusler alloy
antiferromagnetism
exchange bias

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/1361-6463/aaa41a

Cite this

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title = "Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and exchange bias in a layered structure with Fe",

abstract = "Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.",

keywords = "Heusler alloy, antiferromagnetism, exchange bias",

author = "Tomoki Tsuchiya and Ryota Kobayashi and Takahide Kubota and Kotaro Saito and Kanta Ono and Takashi Ohhara and Akiko Nakao and Koki Takanashi",

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T1 - Mn2VAl Heusler alloy thin films

T2 - Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

AU - Tsuchiya, Tomoki

AU - Kobayashi, Ryota

AU - Kubota, Takahide

AU - Saito, Kotaro

AU - Ono, Kanta

AU - Ohhara, Takashi

AU - Nakao, Akiko

AU - Takanashi, Koki

PY - 2018/1/19

Y1 - 2018/1/19

N2 - Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

AB - Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

KW - Heusler alloy

KW - antiferromagnetism

KW - exchange bias

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