Abstract
Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm-3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.
Original language | English |
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Article number | 065001 |
Journal | Journal of Physics D: Applied Physics |
Volume | 51 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2018 Jan 19 |
Keywords
- Heusler alloy
- antiferromagnetism
- exchange bias
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films