Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi

Research output: Contribution to journalArticlepeer-review

Abstract

Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2017 Jul 20

ASJC Scopus subject areas

  • General

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