Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.
|Publication status||Published - 2017 Jul 20|
ASJC Scopus subject areas