Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

Tomoki Tsuchiya; Ryota Kobayashi; Takahide Kubota; Kotaro Saito; Kanta Ono; Takashi Ohhara; Akiko Nakao; Koki Takanashi

Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

Tomoki Tsuchiya, Ryota Kobayashi, Takahide Kubota, Kotaro Saito, Kanta Ono, Takashi Ohhara, Akiko Nakao, Koki Takanashi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

Abstract

Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

Original language	English
Journal	Unknown Journal
Publication status	Published - 2017 Jul 20

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title = "Mn2VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe",

abstract = "Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.",

author = "Tomoki Tsuchiya and Ryota Kobayashi and Takahide Kubota and Kotaro Saito and Kanta Ono and Takashi Ohhara and Akiko Nakao and Koki Takanashi",

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TY - JOUR

T1 - Mn2VAl Heusler alloy thin films

T2 - Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

AU - Tsuchiya, Tomoki

AU - Kobayashi, Ryota

AU - Kubota, Takahide

AU - Saito, Kotaro

AU - Ono, Kanta

AU - Ohhara, Takashi

AU - Nakao, Akiko

AU - Takanashi, Koki

PY - 2017/7/20

Y1 - 2017/7/20

N2 - Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

AB - Mn2VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L21 type Mn2VAl order was controlled by the deposition temperatures. A2-type Mn2VAl films showed no spontaneous magnetization and L21-type Mn2VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm3 at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn2VAl film deposited at 400°C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K.

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