The effect of codoping of Mn and Be in GaAs was discussed. The effect of the modified doping on an increment of the total hole concentration was also studied. It was found that both Mn-doped and Be-doped samples exhibit hole concentrations higher than 1 × 1019 cm-3. On the other hand, the Mn-Be codoped sample shows a remarkable decrease in the hole concentration.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Jul|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering