Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy

Koji Onomitsu, Hideo Fukui, Takashi Maeda, Yoshiro Hirayama, Yoshiji Horikoshi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The effect of codoping of Mn and Be in GaAs was discussed. The effect of the modified doping on an increment of the total hole concentration was also studied. It was found that both Mn-doped and Be-doped samples exhibit hole concentrations higher than 1 × 1019 cm-3. On the other hand, the Mn-Be codoped sample shows a remarkable decrease in the hole concentration.

Original languageEnglish
Pages (from-to)1746-1749
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
Publication statusPublished - 2004 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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