Mixed Ge-Si dimer growth at the Ge/Si(001)- (2×1) surface

L. Patthey, E. L. Bullock, T. Abukawa, S. Kono, L. S.O. Johansson

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)

Abstract

The submonolayer growth of Ge on single domain Si(001)- (2×1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown that Ge initially grows as asymmetric mixed Ge-Si dimers with Ge occupying the up atom and Si occupying the down atom sites. Although this growth mode is predominant up to 0.8 monolayer coverage, pure Ge-Ge dimers do occur as well as Ge substitution of second and perhaps deeper layer Si. This interdiffusion is enhanced upon annealing to 600°C.

Original languageEnglish
Pages (from-to)2538-2541
Number of pages4
JournalPhysical Review Letters
Volume75
Issue number13
DOIs
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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