The submonolayer growth of Ge on single domain Si(001)- (2×1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown that Ge initially grows as asymmetric mixed Ge-Si dimers with Ge occupying the up atom and Si occupying the down atom sites. Although this growth mode is predominant up to 0.8 monolayer coverage, pure Ge-Ge dimers do occur as well as Ge substitution of second and perhaps deeper layer Si. This interdiffusion is enhanced upon annealing to 600°C.
ASJC Scopus subject areas
- Physics and Astronomy(all)