Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching

Tadashi Shimmura, Yuya Suzuki, Sinnosuke Soda, Seiji Samukawa, Mitsumasa Koyanagi, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


The charge accumulated potential of a practical SiO2 contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO2 contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO2 contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO2 contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.

Original languageEnglish
Pages (from-to)433-436
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
Publication statusPublished - 2004 Mar

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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