The charge accumulated potential of a practical SiO2 contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO2 contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO2 contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO2 contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2004 Mar|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films