Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching

Tadashi Shimmura; Yuya Suzuki; Sinnosuke Soda; Seiji Samukawa; Mitsumasa Koyanagi; Kazuhiro Hane

doi:10.1116/1.1649347

Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO₂ etching

Tadashi Shimmura, Yuya Suzuki, Sinnosuke Soda, Seiji Samukawa, Mitsumasa Koyanagi, Kazuhiro Hane

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The charge accumulated potential of a practical SiO₂ contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO₂ contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO₂ contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO₂ contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.

Original language	English
Pages (from-to)	433-436
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	2
DOIs	https://doi.org/10.1116/1.1649347
Publication status	Published - 2004 Mar

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1649347

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@article{95cc10e79fa24b8c950a1976a286463d,

title = "Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching",

abstract = "The charge accumulated potential of a practical SiO2 contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO2 contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO2 contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO2 contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.",

author = "Tadashi Shimmura and Yuya Suzuki and Sinnosuke Soda and Seiji Samukawa and Mitsumasa Koyanagi and Kazuhiro Hane",

year = "2004",

month = mar,

doi = "10.1116/1.1649347",

language = "English",

volume = "22",

pages = "433--436",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching

AU - Shimmura, Tadashi

AU - Suzuki, Yuya

AU - Soda, Sinnosuke

AU - Samukawa, Seiji

AU - Koyanagi, Mitsumasa

AU - Hane, Kazuhiro

PY - 2004/3

Y1 - 2004/3

N2 - The charge accumulated potential of a practical SiO2 contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO2 contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO2 contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO2 contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.

AB - The charge accumulated potential of a practical SiO2 contact structure was measured using plasma discharge with wafer monitors. The localized electric potential at the bottom of SiO2 contact hole differed from that in the surface region. The deposited fluorocarbon in the SiO2 contact hole functions was determined as an electrical current path between the surface region and the bottom of the contact hole. The result suggest that deposited fluorocarbon film in SiO2 contact holes could prevent localized charge accumulation in high-aspect contact holes due to the simultaneous occurance of deposition and ion irradiation during plasma etching.

UR - http://www.scopus.com/inward/record.url?scp=1842556136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842556136&partnerID=8YFLogxK

U2 - 10.1116/1.1649347

DO - 10.1116/1.1649347

M3 - Article

AN - SCOPUS:1842556136

SN - 0734-2101

VL - 22

SP - 433

EP - 436

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 2

ER -

Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO₂ etching

Abstract

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