Mitigating thermo mechanical stress in high-density 3D-LSI through dielectric liners in Cu- through silicon Via - μ-RS and μ-XRD study

M. Murugesan, J. C. Bea, H. Hashimoto, K. W. Lee, M. Koyanagi, T. Fukushima, T. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

3D-LSI chip containing through-silicon-via (TSV, diameters ranging from 5 μm to 30 μm) with two different dielectric liners has been investigated for thermo-mechanical stress (TMS) in Si via micro-Raman spectroscopy and micro-X-ray diffraction analysis. Both the micro-Raman and micro-X-ray diffraction results revealed that the low-k CVD-grown dielectric polyimide (PI) liner tremendously reduces the TMS in the vicinal Si as well as the Si sandwiched between TSVs. It can be explained that the observed smaller TMS values for TSVs with PI is owing to the partial accommodation of the expanded Cu during thermal cycling by the low modulus, soft PI.

Original languageEnglish
Title of host publication2015 International 3D Systems Integration Conference, 3DIC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesTS8.10.1-TS8.10.5
ISBN (Electronic)9781467393850
DOIs
Publication statusPublished - 2015 Nov 20
EventInternational 3D Systems Integration Conference, 3DIC 2015 - Sendai, Japan
Duration: 2015 Aug 312015 Sep 2

Publication series

Name2015 International 3D Systems Integration Conference, 3DIC 2015

Other

OtherInternational 3D Systems Integration Conference, 3DIC 2015
CountryJapan
CitySendai
Period15/8/3115/9/2

Keywords

  • micro-Raman spectroscopy
  • micro-X-ray diffraction
  • polyimide liner
  • thermo-mechanical stress
  • through-Si-via

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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