TY - GEN
T1 - Minimization of residual stress in TSV interconnections by controlling their crystallinity
AU - Liu, Jiatong
AU - Kato, Takeru
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/20
Y1 - 2016/7/20
N2 - The crystallinity of electroplated copper thin-film interconnections varies drastically depending on its manufacturing process, and thus, their mechanical and electrical properties change significantly depending on their micro texture. These changes should cause the variation of the residual stress in the interconnections, and thus, electronic performance of devices and the lifetime of interconnections should vary depending on the amplitude of the residual stress around TSV structures. The main reasons for high residual stress is attributed to not only thermal stress but also the shrinkage of the interconnections during their thermal history. Since the crystallinity of the interconnections varies drastically depending on their electroplating process, the residual stress after high temperature annealing is a strong function of the crystallinity. In this paper, the dominant process factors for changing the crystallinity and the residual stress in the electroplated interconnections were investigated by varying the electroplating process parameters systematically. Finally, it was found that the control of the crystallinity of a seed layer material used for the electroplating is the most important factor for controlling the crystallinity and long-term reliability of thin electroplated interconnections.
AB - The crystallinity of electroplated copper thin-film interconnections varies drastically depending on its manufacturing process, and thus, their mechanical and electrical properties change significantly depending on their micro texture. These changes should cause the variation of the residual stress in the interconnections, and thus, electronic performance of devices and the lifetime of interconnections should vary depending on the amplitude of the residual stress around TSV structures. The main reasons for high residual stress is attributed to not only thermal stress but also the shrinkage of the interconnections during their thermal history. Since the crystallinity of the interconnections varies drastically depending on their electroplating process, the residual stress after high temperature annealing is a strong function of the crystallinity. In this paper, the dominant process factors for changing the crystallinity and the residual stress in the electroplated interconnections were investigated by varying the electroplating process parameters systematically. Finally, it was found that the control of the crystallinity of a seed layer material used for the electroplating is the most important factor for controlling the crystallinity and long-term reliability of thin electroplated interconnections.
KW - Atomic diffusion
KW - EBSD analysis
KW - Electroplated copper
KW - Grain boundary
KW - Lattice mismatch
KW - Mechanical properties
KW - Micro texture
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U2 - 10.1109/ITHERM.2016.7517528
DO - 10.1109/ITHERM.2016.7517528
M3 - Conference contribution
AN - SCOPUS:84983348133
T3 - Proceedings of the 15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
SP - 58
EP - 63
BT - Proceedings of the 15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
Y2 - 31 May 2016 through 3 June 2016
ER -