Minimization of Keep-Out-Zone (KOZ) in 3D IC by local bending stress suppression with low temperature curing adhesive

Hisashi Kino, Hideto Hashiguchi, Yohei Sugawara, Seiya Tanikawa, Takafumi Fukushima, Kangwook Lee, Mitsumasa Koyanagi, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Three dimensional IC (3D IC) has lots of through-Si vias (TSVs) and metal microbumps for electrical connection between stacked IC chips, and also has organic adhesives to enhance the mechanical strength of 3D IC. However, the coefficient of thermal expansion (CTE) mismatch between microbumps and organic adhesives generate the local bending stress in thinned IC chips. Therefore, Keep-Out-Zone (KOZ) for transistors must be considered in 3D IC design to eliminate characteristic fluctuations and degradations due to the local bending stress. In this study, for the first time, we evaluated the effects of low temperature curing adhesive on both the local bending stress and the resultant transistor characteristics for decrease in KOZ of 3D IC.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1110-1115
Number of pages6
ISBN (Electronic)9781479924073
DOIs
Publication statusPublished - 2014 Sep 11
Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
Duration: 2014 May 272014 May 30

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other64th Electronic Components and Technology Conference, ECTC 2014
CountryUnited States
CityOrlando
Period14/5/2714/5/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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