Miniaturization of high-frequency carrier-type thin-film magnetic field sensor using laminated film

M. Takezawa; H. Kikuchi; M. Yamaguchi; K. I. Arai

doi:10.1109/20.908934

Miniaturization of high-frequency carrier-type thin-film magnetic field sensor using laminated film

M. Takezawa, H. Kikuchi, M. Yamaguchi, K. I. Arai

ENG - Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 Ω and a gain of 43 kΩ/Τ was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor.

Original language	English
Pages (from-to)	3664-3666
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	36
Issue number	5 I
DOIs	https://doi.org/10.1109/20.908934
Publication status	Published - 2000 Sep
Event	2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada Duration: 2000 Apr 9 → 2000 Apr 12

Keywords

Demagnetizing field
Domain structure
High-frequency carrier-type magnetic field sensor
Lamination
Magnetic anisotropy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.908934

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title = "Miniaturization of high-frequency carrier-type thin-film magnetic field sensor using laminated film",

abstract = "We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 Ω and a gain of 43 kΩ/Τ was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor.",

keywords = "Demagnetizing field, Domain structure, High-frequency carrier-type magnetic field sensor, Lamination, Magnetic anisotropy",

author = "M. Takezawa and H. Kikuchi and M. Yamaguchi and Arai, {K. I.}",

note = "Funding Information: Manuscript received May 15, 2000. This work was supported in part by the Program for Promotion of Fundamental Studies in Health Sciences of the Organization for Drug ADR Relief, R&D Promotion and Product Review of Japan and by Joint-Research Project for Regional Intensive of Miyagi prefecture Japan, the Nation-wide Cooperative Research Projects, H11-B01 Micromagnetic Systems organized by Research Institute of Electrical Communication (RIEC), Tohoku University, and Nakamura laboratory, the Research Institute of Electrical Communication, Tohoku Univ. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; 2000 International Magnetics Conference (INTERMAG 2000) ; Conference date: 09-04-2000 Through 12-04-2000",

year = "2000",

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language = "English",

volume = "36",

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journal = "IEEE Transactions on Magnetics",

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TY - JOUR

T1 - Miniaturization of high-frequency carrier-type thin-film magnetic field sensor using laminated film

AU - Takezawa, M.

AU - Kikuchi, H.

AU - Yamaguchi, M.

AU - Arai, K. I.

N1 - Funding Information: Manuscript received May 15, 2000. This work was supported in part by the Program for Promotion of Fundamental Studies in Health Sciences of the Organization for Drug ADR Relief, R&D Promotion and Product Review of Japan and by Joint-Research Project for Regional Intensive of Miyagi prefecture Japan, the Nation-wide Cooperative Research Projects, H11-B01 Micromagnetic Systems organized by Research Institute of Electrical Communication (RIEC), Tohoku University, and Nakamura laboratory, the Research Institute of Electrical Communication, Tohoku Univ. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2000/9

Y1 - 2000/9

N2 - We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 Ω and a gain of 43 kΩ/Τ was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor.

AB - We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 Ω and a gain of 43 kΩ/Τ was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor.

KW - Demagnetizing field

KW - Domain structure

KW - High-frequency carrier-type magnetic field sensor

KW - Lamination

KW - Magnetic anisotropy

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JF - IEEE Transactions on Magnetics

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