@inproceedings{994342e463564fa5943835afaa9d1e15,
title = "Millimeter-wave/terahertz detection and photonic double-mixing by transistors",
abstract = "We review the recent progresses on the developments of a plasmonic terahertz (THz) detector and a millimeter-wave (MMW) photonic double-mixer using InP-based and/or graphene-based field effect transistors (FETs). We experimentally demonstrated the ultra-high internal responsivity of the InP-based high-electron mobility FET (HEMT) detector featured by the asymmetric dual-grating-gate structure and examined the improvement of the external responsivity by the Si-lens integration and by the array configuration. For photonic double-mixing, we experimentally verified the frequency down-conversion of an optical data signal to an IF data signal, and showed the intrinsic doublemixing performance of a G-FET exceeding that of an InP-HEMT. We also address a possibility of photonic doublemixing in the THz frequencies.",
keywords = "Graphene FET, InP-HEMT, Millimeter-wave, Photonic double-mixing, Plasmonic detection, Terahertz",
author = "A. Satou and T. Otsuji",
note = "Funding Information: This work was financially supported by “R&D project on carrier-conversion technology with high environmental tolerance Research and System demonstration on high capacity O/E and E/O carrier-conversion technology for next generation wireless and wired networks” of the Commissioned Research of National Institute of Information and Communications Technology (NICT), Japan, by SCOPE (No. 145002001), by the JST-ANR “WITH”, by the Murata Science Foundation, and by JST-CREST, Japan. We thank Dr. K. Iwatsuki, Research Organization of Electrical Communication, Tohoku University, Japan, for a stimulated discussion about the future medium-independent flexible communication systems. We thank Drs. J. Terada and J. Kani, NTT Access Network Service System Labs., Japan, Drs. J. Ichikawa and K. Higuma, New Technology Research Laboratories, Sumitomo Osaka Cement Co. Ltd., Japan, Drs. N. Yamamoto and T. Sakamoto, Photonics Devices Research Laboratory, NICT, Japan, Drs. H. Minamide, H. Ito, and Y. Takida, RIKEN Center for Advanced Photonics (RAP), RIKEN, Japan, for the use of their equipments and valuable discussions about the measurement systems. We thank Dr. T. Ishibashi, NTT Electronics Techno, Japan, and Dr. M. Shimizu, NTT Electronics, Japan, for implementation of the detector module and valuable discussion about it. We thank Drs. V. Ryzhii, T. Suemitsu, M. Suemitsu, H. Fukidome, T. Watanabe, Mrs. K. Sugawara, G. Tamamushi, F. Kasuya, H. Taniguchi, T. Hosotani, and Y. Omori, Research Institute of Electrical Communication, Tohoku University, Japan, for the device fabrications and measurements as well as valuable discussions about them. We thank NTT-AT Corp. for cooperation in processing the sample fabrication of A-DGG HEMTs. The device process of InP-HEMTs was carried out at the Laboratory for Nanoelectronics and Spintronics of Tohoku University, Japan. Publisher Copyright: {\textcopyright} 2017 SPIE.; Infrared Remote Sensing and Instrumentation XXV 2017 ; Conference date: 07-08-2017 Through 08-08-2017",
year = "2017",
doi = "10.1117/12.2275531",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Marija Strojnik and Kirk, {Maureen S.}",
booktitle = "Infrared Remote Sensing and Instrumentation XXV",
}