Millimeter-wave/terahertz detection and photonic double-mixing by transistors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)


We review the recent progresses on the developments of a plasmonic terahertz (THz) detector and a millimeter-wave (MMW) photonic double-mixer using InP-based and/or graphene-based field effect transistors (FETs). We experimentally demonstrated the ultra-high internal responsivity of the InP-based high-electron mobility FET (HEMT) detector featured by the asymmetric dual-grating-gate structure and examined the improvement of the external responsivity by the Si-lens integration and by the array configuration. For photonic double-mixing, we experimentally verified the frequency down-conversion of an optical data signal to an IF data signal, and showed the intrinsic doublemixing performance of a G-FET exceeding that of an InP-HEMT. We also address a possibility of photonic doublemixing in the THz frequencies.

Original languageEnglish
Title of host publicationInfrared Remote Sensing and Instrumentation XXV
EditorsMarija Strojnik, Maureen S. Kirk
ISBN (Electronic)9781510612631
Publication statusPublished - 2017
EventInfrared Remote Sensing and Instrumentation XXV 2017 - San Diego, United States
Duration: 2017 Aug 72017 Aug 8

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherInfrared Remote Sensing and Instrumentation XXV 2017
Country/TerritoryUnited States
CitySan Diego


  • Graphene FET
  • InP-HEMT
  • Millimeter-wave
  • Photonic double-mixing
  • Plasmonic detection
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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