Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons

Ying Jiang Guo; Kai Da Xu; Xianjin Deng; Xu Cheng; Qiang Chen

doi:10.1109/LED.2020.3003804

Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons

Ying Jiang Guo, Kai Da Xu, Xianjin Deng, Xu Cheng, Qiang Chen

ENG - Communications Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW) spoof surface plasmon polaritons (SSPPs). The center frequency and bandwidth of this SSPP-based on-chip BPF can be easily controlled by tuning the geometry dimensions of the SSPP unit cell, which is attributed to its unique dispersion characteristics. For demonstration, a prototype of the proposed BPF is fabricated and experimentally characterized, with good agreement between the simulated and measured results. Due to the ability of the strong electric field confinement, the proposed on-chip SSPP structure has lower coupling feature with closely-spaced transmission line circuits than its counterpart traditional HMSIW structure.

Original language	English
Article number	9121335
Pages (from-to)	1165-1168
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	8
DOIs	https://doi.org/10.1109/LED.2020.3003804
Publication status	Published - 2020 Aug

Keywords

Bandpass filters
GaAs-based circuits
on-chip devices
spoof surface plasmon polaritons

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2020.3003804

Cite this

@article{35afcbee20a14434b2c4e509c33ead97,

title = "Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons",

abstract = "A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW) spoof surface plasmon polaritons (SSPPs). The center frequency and bandwidth of this SSPP-based on-chip BPF can be easily controlled by tuning the geometry dimensions of the SSPP unit cell, which is attributed to its unique dispersion characteristics. For demonstration, a prototype of the proposed BPF is fabricated and experimentally characterized, with good agreement between the simulated and measured results. Due to the ability of the strong electric field confinement, the proposed on-chip SSPP structure has lower coupling feature with closely-spaced transmission line circuits than its counterpart traditional HMSIW structure. ",

keywords = "Bandpass filters, GaAs-based circuits, on-chip devices, spoof surface plasmon polaritons",

author = "Guo, {Ying Jiang} and Xu, {Kai Da} and Xianjin Deng and Xu Cheng and Qiang Chen",

note = "Funding Information: Manuscript received May 10, 2020; revised June 16, 2020; accepted June 17, 2020. Date of publication June 19, 2020; date of current version July 24, 2020. This work was supported in part by the FY2019 Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Research in Japan (Standard) under Grant P19350. The review of this letter was arranged by Editor Z. Ma. (Corresponding author: Kai-Da Xu.) Ying-Jiang Guo, Xianjin Deng, and Xu Cheng are with the Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = aug,

doi = "10.1109/LED.2020.3003804",

language = "English",

volume = "41",

pages = "1165--1168",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons

AU - Guo, Ying Jiang

AU - Xu, Kai Da

AU - Deng, Xianjin

AU - Cheng, Xu

AU - Chen, Qiang

N1 - Funding Information: Manuscript received May 10, 2020; revised June 16, 2020; accepted June 17, 2020. Date of publication June 19, 2020; date of current version July 24, 2020. This work was supported in part by the FY2019 Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Research in Japan (Standard) under Grant P19350. The review of this letter was arranged by Editor Z. Ma. (Corresponding author: Kai-Da Xu.) Ying-Jiang Guo, Xianjin Deng, and Xu Cheng are with the Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China. Publisher Copyright: © 1980-2012 IEEE.

PY - 2020/8

Y1 - 2020/8

N2 - A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW) spoof surface plasmon polaritons (SSPPs). The center frequency and bandwidth of this SSPP-based on-chip BPF can be easily controlled by tuning the geometry dimensions of the SSPP unit cell, which is attributed to its unique dispersion characteristics. For demonstration, a prototype of the proposed BPF is fabricated and experimentally characterized, with good agreement between the simulated and measured results. Due to the ability of the strong electric field confinement, the proposed on-chip SSPP structure has lower coupling feature with closely-spaced transmission line circuits than its counterpart traditional HMSIW structure.

AB - A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW) spoof surface plasmon polaritons (SSPPs). The center frequency and bandwidth of this SSPP-based on-chip BPF can be easily controlled by tuning the geometry dimensions of the SSPP unit cell, which is attributed to its unique dispersion characteristics. For demonstration, a prototype of the proposed BPF is fabricated and experimentally characterized, with good agreement between the simulated and measured results. Due to the ability of the strong electric field confinement, the proposed on-chip SSPP structure has lower coupling feature with closely-spaced transmission line circuits than its counterpart traditional HMSIW structure.

KW - Bandpass filters

KW - GaAs-based circuits

KW - on-chip devices

KW - spoof surface plasmon polaritons

UR - http://www.scopus.com/inward/record.url?scp=85089511175&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85089511175&partnerID=8YFLogxK

U2 - 10.1109/LED.2020.3003804

DO - 10.1109/LED.2020.3003804

M3 - Article

AN - SCOPUS:85089511175

VL - 41

SP - 1165

EP - 1168

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

M1 - 9121335

ER -

Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this