Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures

K. Ohtani, H. Ohno

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Mid-infrared intersubband light-emitting diodes based on InAs/GaSb/AlSb type-II cascade structure have been investigated. The observed emission energy is in good agreement with calculation based on the multi-band k · p theory. In contrast to interband cascade structures, dominant polarization of the emitted light is perpendicular to the quantum well layers. Structure dependence of intersubband electroluminescence is also presented.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number1
DOIs
Publication statusPublished - 2000 Apr
EventThe 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99) - Bad Ischl, Austria
Duration: 1999 Sep 71999 Sep 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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