Mid-infrared InAs-based quantum cascade lasers

K. Ohtani, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report our recent experimental results on mid-infrared InAs-based quantum cascade lasers grown on n-InAs(100) substrates by molecular beam epitaxy. An InAs double plasmon waveguide is used for the optical confinement. The completed QCLs operate at 8-14 m wavelength range. Observed minimum threshold current density at 80 K by using InAs/AlGaSb superlattice active layers is 0.42kA/cm2, which is the lowest threshold current density in the mid-infrared region. The observed maximum operation temperature is 270K.

Original languageEnglish
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages78-81
Number of pages4
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: 2005 May 82005 May 12

Other

Other2005 International Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom
CityGlasgow, Scotland
Period05/5/805/5/12

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

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    Ohtani, K., & Ohno, H. (2005). Mid-infrared InAs-based quantum cascade lasers. In 2005 International Conference on Indium Phosphide and Related Materials (Vol. 2005, pp. 78-81). [1517424] https://doi.org/10.1109/ICIPRM.2005.1517424