Microwave imaging of conductivity distribution of silicon wafers

Yang Ju; Masumi Saka; Hiroyuki Abé

doi:10.1115/ipack2003-35117

Microwave imaging of conductivity distribution of silicon wafers

Yang Ju, Masumi Saka, Hiroyuki Abé

ENG - Finemechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Conductivity of silicon wafers was measured using the amplitude of the reflection coefficient of a microwave signal. A network analyzer was used to generate the microwave signal fed to a sensor and to measure the amplitude of the reflection coefficient. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. By microwave imaging, the distribution of the conductivity of a silicon wafer was mapped.

Original language	English
Title of host publication	Advances in Electronic Packaging 2003
Subtitle of host publication	Volume 1
Publisher	American Society of Mechanical Engineers
Pages	61-64
Number of pages	4
ISBN (Print)	0791836908, 9780791836903
DOIs	https://doi.org/10.1115/ipack2003-35117
Publication status	Published - 2003 Jan 1
Event	2003 International Electronic Packaging Technical Conference and Exhibition - Haui, HI, United States Duration: 2003 Jul 6 → 2003 Jul 11

Publication series

Name	Advances in Electronic Packaging
Volume	1

Other

Other	2003 International Electronic Packaging Technical Conference and Exhibition
Country	United States
City	Haui, HI
Period	03/7/6 → 03/7/11

ASJC Scopus subject areas

Engineering(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Ju, Y, Saka, M & Abé, H 2003, Microwave imaging of conductivity distribution of silicon wafers. in Advances in Electronic Packaging 2003: Volume 1. Advances in Electronic Packaging, vol. 1, American Society of Mechanical Engineers, pp. 61-64, 2003 International Electronic Packaging Technical Conference and Exhibition, Haui, HI, United States, 03/7/6. https://doi.org/10.1115/ipack2003-35117

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abstract = "Conductivity of silicon wafers was measured using the amplitude of the reflection coefficient of a microwave signal. A network analyzer was used to generate the microwave signal fed to a sensor and to measure the amplitude of the reflection coefficient. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. By microwave imaging, the distribution of the conductivity of a silicon wafer was mapped.",

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year = "2003",

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doi = "10.1115/ipack2003-35117",

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AU - Abé, Hiroyuki

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AB - Conductivity of silicon wafers was measured using the amplitude of the reflection coefficient of a microwave signal. A network analyzer was used to generate the microwave signal fed to a sensor and to measure the amplitude of the reflection coefficient. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. By microwave imaging, the distribution of the conductivity of a silicon wafer was mapped.

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T3 - Advances in Electronic Packaging

SP - 61

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BT - Advances in Electronic Packaging 2003

PB - American Society of Mechanical Engineers

T2 - 2003 International Electronic Packaging Technical Conference and Exhibition

Y2 - 6 July 2003 through 11 July 2003

ER -

Microwave imaging of conductivity distribution of silicon wafers

Abstract

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