Microwave heating origination and rapid crystallization of PZT thin films in separated H field

Ziping Cao, Zhanjie Wang, Noboru Yoshikawa, Shoji Taniguchi

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26 Citations (Scopus)

Abstract

In the separated microwave H and E fields, the heating behaviour of a SiO2/Si substrate was first investigated. Subsequently, the heating behaviour was further compared with the samples deposited with Pt/Ti electrodes and PZT films, respectively. It was found that PZT thin films were much more efficiently heated and crystallized in the H field than in the E field; moreover, the heating of the samples was derived mainly from the contribution of Pt/Ti and Si, which is distinct from the previous assumption about microwave dielectric heating of the E field. This unexpected foundation indicates that susceptors or high power are not necessary for microwave annealing of thin films, and furthermore, this method provides a new path for annealing any kind of thin film deposited on semiconducting or conductive substrates.

Original languageEnglish
Article number092003
JournalJournal of Physics D: Applied Physics
Volume41
Issue number9
DOIs
Publication statusPublished - 2008 May 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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