Microwave heating behaviors of Si substrate materials in a single-mode cavity

Ziping Cao, Noboru Yoshikawa, Shoji Taniguchi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Microwave heating behaviors of Si substrate materials were investigated in both H and E field. The temperature curves could be divided into three stages in H field but two stages in E field according to the changing heating rate. With the increase of the Si plate thickness, the heating efficiency gradually decreases in both H and E field. The boron doping in Si has also an evident influence on the heating behaviors, and leads to the reduction of the maximal temperature in the heating curve. By contrast, a thin Au layer deposited on the Si plate can significantly promote the heating efficiency in H field. For all samples, although higher microwave power is used for E field heating, the maximal temperature of the same sample heated at the E maximum was lower than that at the H maximum, confirming that the heating of H field is more effective than that of E field for a high electric conductive sample, and reversely E field heating is more superior for a low conductive one.

Original languageEnglish
Pages (from-to)900-903
Number of pages4
JournalMaterials Chemistry and Physics
Volume124
Issue number2-3
DOIs
Publication statusPublished - 2010 Dec 1

Keywords

  • Microwave heating
  • Si substrate
  • Single-mode

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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