Microwave excited low temperature high density plasma process

Tadahiro Ohmi, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

Abstract

Lowering process temperature of gate oxide formation process is essential to realize ultra-high integration devices. We have succeeded in substantially reducing a process temperature of silicon oxide film formation on (100) and (111) silicon substrate by Kr/O2 mixed microwave excited high-density plasma which have high-density and low electron temperature. The silicon oxide films exhibit high growth rate, high dielectric strength, charge-to-breakdown and low interface trap density enough to thermally grown silicon oxide.

Original languageEnglish
Pages (from-to)883-890
Number of pages8
JournalShinku/Journal of the Vacuum Society of Japan
Volume43
Issue number9
DOIs
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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