Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs

Kazuhiko Endo, Yao Jen Lee

Research output: Contribution to journalReview articlepeer-review

Abstract

The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.

Original languageEnglish
Article number8862822
Pages (from-to)34-38
Number of pages5
JournalIEEE Nanotechnology Magazine
Volume13
Issue number6
DOIs
Publication statusPublished - 2019 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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