Microstructures of SiC-TiC in-situ Composites Prepared by Chemical Vapor Deposition

Takashi Goto, Toshio Hirai

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7 Citations (Scopus)


The SiC-TiC in-situ composites were prepared by chemical vapor deposition using SiCL4, TiCl4, CCI4and H2 as source gases. The deposits containing free C, TiSi2 or TiaSiC2were porous or granular, while the SiC-TiC in-situ composites were dense platelike. The microstructures of the SiC-TiC in-situ composites varied depending on the deposition conditions. The SiC-TiC in-situ composite prepared at Tdep= 1673 K, Ccl4/H2=1.7X 10-2and =0.42, in which fine SiC particles were uniformly dispersed in the TiC matrix, had a high fracture toughness value (KIc) more than 10.

Original languageEnglish
Pages (from-to)487-490
Number of pages4
Journaljournal of the japan society of powder and powder metallurgy
Issue number9
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry


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