Microstructures, defects, and localization luminescence in InGaAsN alloy films

F. Nakajima; S. Sanorpim; T. Yamamoto; E. Takuma; R. Katayama; H. Ichinose; K. Onabe; Y. Shiraki

doi:10.1002/pssc.200303399

Microstructures, defects, and localization luminescence in InGaAsN alloy films

F. Nakajima, S. Sanorpim, T. Yamamoto, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, Y. Shiraki

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We studied the structural and optical properties of In_xGa _1-xAs_1-yN_y (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N₂ ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In_0.116Ga_0.884As _1-yN_y (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of In_xGa_1-xAs _1-yN_y (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.

Original language	English
Pages (from-to)	2778-2781
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303399
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200303399

Cite this

@article{e76880a29d9a49b1b2e5b1ffdd2dbd6d,

title = "Microstructures, defects, and localization luminescence in InGaAsN alloy films",

abstract = "We studied the structural and optical properties of InxGa 1-xAs1-yNy (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As 1-yNy (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1-xAs 1-yNy (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.",

author = "F. Nakajima and S. Sanorpim and T. Yamamoto and E. Takuma and R. Katayama and H. Ichinose and K. Onabe and Y. Shiraki",

year = "2003",

doi = "10.1002/pssc.200303399",

language = "English",

pages = "2778--2781",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Microstructures, defects, and localization luminescence in InGaAsN alloy films

AU - Nakajima, F.

AU - Sanorpim, S.

AU - Yamamoto, T.

AU - Takuma, E.

AU - Katayama, R.

AU - Ichinose, H.

AU - Onabe, K.

AU - Shiraki, Y.

PY - 2003

Y1 - 2003

N2 - We studied the structural and optical properties of InxGa 1-xAs1-yNy (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As 1-yNy (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1-xAs 1-yNy (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.

AB - We studied the structural and optical properties of InxGa 1-xAs1-yNy (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As 1-yNy (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1-xAs 1-yNy (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.

UR - http://www.scopus.com/inward/record.url?scp=33846545067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846545067&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303399

DO - 10.1002/pssc.200303399

M3 - Conference article

AN - SCOPUS:33846545067

SP - 2778

EP - 2781

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1610-1634

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Microstructures, defects, and localization luminescence in InGaAsN alloy films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this