TY - JOUR
T1 - Microstructures, defects, and localization luminescence in InGaAsN alloy films
AU - Nakajima, F.
AU - Sanorpim, S.
AU - Yamamoto, T.
AU - Takuma, E.
AU - Katayama, R.
AU - Ichinose, H.
AU - Onabe, K.
AU - Shiraki, Y.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - We studied the structural and optical properties of InxGa 1-xAs1-yNy (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As 1-yNy (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1-xAs 1-yNy (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.
AB - We studied the structural and optical properties of InxGa 1-xAs1-yNy (x = 0.116, ∼0.3 and y = 0-0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3-0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As 1-yNy (y = 0-0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1-xAs 1-yNy (x = ∼0.3, y = 0-0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale.
UR - http://www.scopus.com/inward/record.url?scp=33846545067&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846545067&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303399
DO - 10.1002/pssc.200303399
M3 - Conference article
AN - SCOPUS:33846545067
SP - 2778
EP - 2781
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 7
T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003
Y2 - 25 May 2003 through 30 May 2003
ER -