Microstructures and grain boundaries of (Ti,Al)N films

T. Suzuki, D. Huang, Y. Ikuhara

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)

    Abstract

    Titanium and titanium-aluminum targets 100 φ in diameter were arc-discharged at ~500 °C under nitrogen plasma conditions, and thin films were synthesized on cemented carbide substrates. First, the Ti ions were bombarded under a high vacuum to improve the adhesion strength, second, the TiN films were deposited as interlayers, and finally (Ti,Al)N films were synthesized by 2-3 μm. The interface between TiN and (Ti,Al)N films had no amorphous layer, and they were continuously connected to each other on an atomic scale. Further, Al atoms were not observed in the TiN films even 20 nm away from the TiN-(Ti,Al)N interface. In this paper, the microstructures of (Ti,Al)N films and interfaces between TiN and (Ti,Al)N films were analyzed with high-resolution electron microscopy.

    Original languageEnglish
    Pages (from-to)41-47
    Number of pages7
    JournalSurface and Coatings Technology
    Volume107
    Issue number1
    DOIs
    Publication statusPublished - 1998 Aug 21

    Keywords

    • (Ti,Al)N films
    • Al
    • Grain boundaries
    • TiN films

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Microstructures and grain boundaries of (Ti,Al)N films'. Together they form a unique fingerprint.

    Cite this