Microstructure of a CuPt-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy

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Abstract

The microstructure of a CuPt-ordered GaInP alloy that includes antiphase boundaries (APBs) was studied by cross-sectional scanning tunneling microscopy. By selectively determining the arrangements of In and Ga atoms on a cleaved (110) surface, it was found that (1) the alloy is comprised of small domains (about 5-10 nm in size) of monolayer superlattices of GaP/InP along [̄111], and (2) the ordered domains are bounded by APBs, presumably lying on (̄111), (̄110), (001), or (1̄11), at which the sequence of GaP and InP layers along [̄111] is 180° out of phase. It was also found that (3) the atomic layers of InP, sandwiched between the ordered domains, are formed on parts of the APBs. It was suggested that the InP layers act as quantum wells and that they emit linearly polarized light parallel to the layers.

Original languageEnglish
Pages (from-to)2357-2360
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 B
DOIs
Publication statusPublished - 2006 Mar 27
Externally publishedYes

Keywords

  • Antiphase boundaries
  • Cross-sectional scanning tunneling microscopy
  • GaInP
  • Quantum wells
  • Spontaneously ordered structures

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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