Microstructure characterization of Bi2Sr2CaCu2Ox single crystal irradiated with 18 MeV Fe8+ ions

W. L. Zhou, Y. Sasaki, Y. Ikuhara

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    4 Citations (Scopus)

    Abstract

    Bi2Sr2CaCu2Ox single crystals irradiated with 18 MeV Fe8+ ions at a dose of 1 × 1012 ions/cm2 were studied by transmission electron microscopy both on plan- and cross-sectional views. It shows that the defects produced by ion irradiation with such an energy are ellipse-like amorphous defects embedded in the single crystal. The typical size of ellipse-like defects is about 10 nm × 6 nm along each axis. Most of the directions of long axes of ellipse-like defects are independent of the irradiated direction, which may be attributed to the collision between ions and atoms inside the crystal at the final stage of energy loss. The relative concentration of bismuth is greatly decreased inside the defects and a little bit increased around the amorphous defects. The antiphase boundary was occasionally found inside the single crystal, which was the preferential zone for the formation of ion irradiation defects. By observing along the c-axis of the single crystal, it was found that some defects had a tendency to form along small facets, such as the (100), (010) and (110) planes of Bi2Sr2CaCu2Ox, during ion irradiation. The density of the ion-irradiation defects is higher than the dose of Fe8+ ion irradiation applied, which implies that one ion generates at least one defect. The enhancement of magnetization hysteresis in DC magnetization curves by irradiation of 18 MeV Fe8+ ions strongly depends on the dose of the ion irradiation.

    Original languageEnglish
    Pages (from-to)323-332
    Number of pages10
    JournalPhysica C: Superconductivity and its applications
    Volume234
    Issue number3-4
    DOIs
    Publication statusPublished - 1994 Dec 15

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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