Microstructure and thermoelectric property of arc-melted silicon borides

Lidong Chen; Takashi Goto; Jianhui Li; Toshio Hirai

doi:10.2497/jjspm.44.55

Microstructure and thermoelectric property of arc-melted silicon borides

Lidong Chen, Takashi Goto, Jianhui Li, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiB_n and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiB_n near the SiB_n-Si boundary to form SiB₄, and as the result SiB_n-SiB₄ composites were obtained. The SiB_n-SiB₄ composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

Original language	English
Pages (from-to)	55-59
Number of pages	5
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	44
Issue number	1
DOIs	https://doi.org/10.2497/jjspm.44.55
Publication status	Published - 1997 Jan

Keywords

Arc melting
Electrical conductivity
Heat treatment
Microstructure
SiB-SiB composite
Silicon boride
Thermal conductivity

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

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10.2497/jjspm.44.55

Cite this

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title = "Microstructure and thermoelectric property of arc-melted silicon borides",

abstract = "Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn-SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.",

keywords = "Arc melting, Electrical conductivity, Heat treatment, Microstructure, SiB-SiB composite, Silicon boride, Thermal conductivity",

author = "Lidong Chen and Takashi Goto and Jianhui Li and Toshio Hirai",

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T1 - Microstructure and thermoelectric property of arc-melted silicon borides

AU - Chen, Lidong

AU - Goto, Takashi

AU - Li, Jianhui

AU - Hirai, Toshio

PY - 1997/1

Y1 - 1997/1

N2 - Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn-SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

AB - Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn-SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

KW - Arc melting

KW - Electrical conductivity

KW - Heat treatment

KW - Microstructure

KW - SiB-SiB composite

KW - Silicon boride

KW - Thermal conductivity

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Microstructure and thermoelectric property of arc-melted silicon borides

Abstract

Keywords

ASJC Scopus subject areas

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