Abstract
Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn-SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.
Original language | English |
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Pages (from-to) | 55-59 |
Number of pages | 5 |
Journal | Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy |
Volume | 44 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 Jan |
Keywords
- Arc melting
- Electrical conductivity
- Heat treatment
- Microstructure
- SiB-SiB composite
- Silicon boride
- Thermal conductivity
ASJC Scopus subject areas
- Mechanical Engineering
- Industrial and Manufacturing Engineering
- Metals and Alloys
- Materials Chemistry