Microstructure and thermoelectric property of arc-melted silicon borides

Lidong Chen, Takashi Goto, Jianhui Li, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Silicon bondes were prepared by arc melting in argon atmosphere using silicon and boron powders in a boron content range from 80 to 94mol%. As-melted specimens consisted of SiBn and free Si. The contents of free Si decreased from 30 to 3vol% as the boron content in raw material increased from 80 to 94mol%. The as-melted specimens were heat-treated in argon atmosphere at temperatures of 1400 to 1700K. During heat treatment, free Si reacted with SiBn near the SiBn-Si boundary to form SiB4, and as the result SiBn-SiB4 composites were obtained. The SiBn-SiB4 composites showed larger electrical conductivity and smaller thermal conductivity than the as-melted specimens, which contributes to improvement of thermoelectrical property.

Original languageEnglish
Pages (from-to)55-59
Number of pages5
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Issue number1
Publication statusPublished - 1997 Jan


  • Arc melting
  • Electrical conductivity
  • Heat treatment
  • Microstructure
  • SiB-SiB composite
  • Silicon boride
  • Thermal conductivity

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry


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