Microstructure and thermoelectric properties of arc-melted silicon borides

Lidong Chen, Takashi Goto, Jianhui Li, Eiji Aoyagi, Toshio Hirai

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

Silicon borides in a boron content range of 80 to 94 mol% were prepared by arc-melting. As-melted specimens consisted of SiBn (hexagonal, n = 14-49) and free silicon. The free silicon content decreased with increasing boron content in raw materials. The arc-melted specimens were annealed in an argon atmosphere at 1663 K. By annealing for 1.8 ks, SiB4 phase formed at the Si-SiB4 boundary. By annealing for more than 5.4 ks, SiB6 phase formed and SiB4 phase disappeared. SiBn content increased with increasing annealing time. The annealing for 5.4 ks caused a great increase of the Seebeck coefficient.

Original languageEnglish
Pages215-218
Number of pages4
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger
Duration: 1997 Aug 261997 Aug 29

Other

OtherProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
CityDresden, Ger
Period97/8/2697/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Chen, L., Goto, T., Li, J., Aoyagi, E., & Hirai, T. (1997). Microstructure and thermoelectric properties of arc-melted silicon borides. 215-218. Paper presented at Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97, Dresden, Ger, .