Critical current density and surface resistance are evaluated for dilute Zn substituted high quality ErBa2Cu3O7-δ films. Dilute Zn substituted ErBa2Cu3O7-δ films are grown on SrTiO3 substrates by a pulsed laser deposition technique. Targets used in the experiments are un-substituted, 0.3at. %, 0.5at.%, 1.0at.% and 10at.% Zn substituted ErBa2Cu3O 7-δ ceramics. Crystal structures, field angular dependence of critical current density and surface resistance are evaluated. Zn substituting into YBa2Cu3O7-δ has been studied for understanding the origin of oxide superconductivity with substituting level of several %. In this study, dilute Zn below 1.0 at.% is mainly adopted. Further substitution reduces its critical temperature. We intended to introduce zero-dimensional superconductivity killer atoms into CuO2 plane as artificial pinning centers. The obtained Zn substituted ErBa2Cu 3O7-δ films are c-axis oriented without peaks from other phases. The sharp drop temperature of surface resistance decreases as the Zn substitution. However, the surface resistance at a low temperature around 20K is almost the same among the ErBa2Cu3O 7-δ films with different Zn substitution. We also measured the field angular dependence of critical current density of the Zn substituted ErBa2Cu3O7-δ films. There are no strong angular dependences. Dilute zinc substitution increases critical current density for almost of all directions. However, in a high magnetic field of several tesla, pinning force around the field direction of a-axis is enhanced. Double introduction of one dimensional artificial pinning centers such as BaZrO 3 nano-rods and zero dimensional artificial pinning centers is thought to be very effective for increasing critical current density for power cable applications.
- ErBaCuO Zn J R artificial pinning center
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering