Microstructure and hardness of SiC-TiC nanocomposite thin films prepared by radiofrequency magnetron sputtering

Gaku Osugi, Akihiko Ito, Mikinori Hotta, Takashi Goto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Silicon carbide-titanium carbide (SiC-TiC) nanocomposite thin films were prepared by radiofrequency magnetron sputtering using SiC-TiC composite targets fabricated by spark plasma sintering. The SiC thin films were amorphous at substrate temperatures below 573 K and crystallized in the cubic crystal system (3C) at substrate temperatures greater than 773 K. Cubic SiC-TiC nanocomposite thin films, which contain a mixture of 3C-SiC and B1-TiC phases, were obtained at a TiC content of greater than 20 mol%. The amorphous films possessed a dense cross-section and a smooth surface. The morphology of the SiC-TiC nanocomposite thin films changed from granular to columnar with increasing substrate temperature. The SiC-TiC nanocomposite thin films prepared at TiC content of 70-80 mol% and substrate temperature of 573 K showed the highest hardness of 35 GPa.

Original languageEnglish
Pages (from-to)5851-5855
Number of pages5
JournalThin Solid Films
Volume520
Issue number18
DOIs
Publication statusPublished - 2012 Jul 1

Keywords

  • Indentation
  • Microstructure
  • Nanocomposites
  • Silicon carbide
  • Spark plasma sintering
  • Sputtering
  • Thin films
  • Titanium carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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