Abstract
Silicon carbide-titanium carbide (SiC-TiC) nanocomposite thin films were prepared by radiofrequency magnetron sputtering using SiC-TiC composite targets fabricated by spark plasma sintering. The SiC thin films were amorphous at substrate temperatures below 573 K and crystallized in the cubic crystal system (3C) at substrate temperatures greater than 773 K. Cubic SiC-TiC nanocomposite thin films, which contain a mixture of 3C-SiC and B1-TiC phases, were obtained at a TiC content of greater than 20 mol%. The amorphous films possessed a dense cross-section and a smooth surface. The morphology of the SiC-TiC nanocomposite thin films changed from granular to columnar with increasing substrate temperature. The SiC-TiC nanocomposite thin films prepared at TiC content of 70-80 mol% and substrate temperature of 573 K showed the highest hardness of 35 GPa.
Original language | English |
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Pages (from-to) | 5851-5855 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2012 Jul 1 |
Keywords
- Indentation
- Microstructure
- Nanocomposites
- Silicon carbide
- Spark plasma sintering
- Sputtering
- Thin films
- Titanium carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry