Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer

Zhan Jie Wang; Isao Karibe; Hiroyuki Kokawa; Ryutaro Maeda

doi:10.1080/10584580190044326

Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer

Zhan Jie Wang, Isao Karibe, Hiroyuki Kokawa, Ryutaro Maeda

ENG - Materials Processing

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of Pb(Zr_0.52Ti_0.48)O₃ (PZT) were prepared by pulsed laser deposition technique on Pt/Ti/SiO₂/Si substrates using a template layer derived by sol-gel processing. Crystalline phases and microstructure of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. The use of the template layer favored the obtaining of (111) oriented crystalline PZT film with perovskite phase at relatively low temperature. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The PZT films fabricated by laser ablation on the template layer exhibited better ferroelectric properties than those derived directly on Pt/Ti/SiO₂/Si. The remanent polarization and the coercive field of the film fabricated on the template layer and annealed at 650°C were 31.28 μC/cm² and 45.29 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1069 and 0.06, respectively.

Original language	English
Pages (from-to)	187-195
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	46
DOIs	https://doi.org/10.1080/10584580190044326
Publication status	Published - 2002 Jan 1

Keywords

Ferroelectric properties
Laser ablation
Lead zirconate titanate (PZT)
Sol-gel
Template layer
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584580190044326

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@article{c48073e764344cccb97821e4e8dec71c,

title = "Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer",

abstract = "Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel processing. Crystalline phases and microstructure of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. The use of the template layer favored the obtaining of (111) oriented crystalline PZT film with perovskite phase at relatively low temperature. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The PZT films fabricated by laser ablation on the template layer exhibited better ferroelectric properties than those derived directly on Pt/Ti/SiO2/Si. The remanent polarization and the coercive field of the film fabricated on the template layer and annealed at 650°C were 31.28 μC/cm2 and 45.29 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1069 and 0.06, respectively.",

keywords = "Ferroelectric properties, Laser ablation, Lead zirconate titanate (PZT), Sol-gel, Template layer, Thin film",

author = "Wang, {Zhan Jie} and Isao Karibe and Hiroyuki Kokawa and Ryutaro Maeda",

year = "2002",

month = jan,

day = "1",

doi = "10.1080/10584580190044326",

language = "English",

volume = "46",

pages = "187--195",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer

AU - Wang, Zhan Jie

AU - Karibe, Isao

AU - Kokawa, Hiroyuki

AU - Maeda, Ryutaro

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel processing. Crystalline phases and microstructure of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. The use of the template layer favored the obtaining of (111) oriented crystalline PZT film with perovskite phase at relatively low temperature. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The PZT films fabricated by laser ablation on the template layer exhibited better ferroelectric properties than those derived directly on Pt/Ti/SiO2/Si. The remanent polarization and the coercive field of the film fabricated on the template layer and annealed at 650°C were 31.28 μC/cm2 and 45.29 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1069 and 0.06, respectively.

AB - Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel processing. Crystalline phases and microstructure of the PZT films were investigated by X-ray diffraction analysis and scanning electron microscopy, respectively. The use of the template layer favored the obtaining of (111) oriented crystalline PZT film with perovskite phase at relatively low temperature. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The PZT films fabricated by laser ablation on the template layer exhibited better ferroelectric properties than those derived directly on Pt/Ti/SiO2/Si. The remanent polarization and the coercive field of the film fabricated on the template layer and annealed at 650°C were 31.28 μC/cm2 and 45.29 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1069 and 0.06, respectively.

KW - Ferroelectric properties

KW - Laser ablation

KW - Lead zirconate titanate (PZT)

KW - Sol-gel

KW - Template layer

KW - Thin film

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U2 - 10.1080/10584580190044326

DO - 10.1080/10584580190044326

M3 - Article

AN - SCOPUS:33845512328

VL - 46

SP - 187

EP - 195

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

ER -

Microstructure and electrical properties of PZT thin films deposited by laser ablation on template layer

Abstract

Keywords

ASJC Scopus subject areas

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