Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La0.7Sr0.3MnO 3/SiO2/Si substrate

Zhan Jie Wang, Hirokazu Usuki, Toshihide Kumagai, Hiroyuki Kokawa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

(La0.7Sr0.3)MnO3 thin films were deposited on SiO2/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on (La0.7Sr0.3)MnO3-coated SiO 2/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm2 and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.

Original languageEnglish
Pages (from-to)375-379
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume42
Issue number3
DOIs
Publication statusPublished - 2007 Jun

Keywords

  • Crystal structure
  • Electric materials
  • Ferroelectricity
  • Oxides
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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