Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method

Zhan Jie Wang; Hirokazu Usuki; Toshihide Kumagai; Hiroyuki Kokawa

doi:10.1016/j.jcrysgro.2006.05.014

Microstructure and electrical properties of La_0.7Sr_0.3MnO₃ thin films deposited by metallo-organic decomposition method

Zhan Jie Wang, Hirokazu Usuki, Toshihide Kumagai, Hiroyuki Kokawa

ENG - Materials Processing

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Lanthanum strontium manganate (La_0.7Sr_0.3MnO₃: LSMO) thin films were grown on SiO₂/Si substrates by a metallo-organic decomposition method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that La_0.7Sr_0.3MnO₃ films with a perovskite single phase could be obtained by annealing at 700 °C. Transmission electron microscopy (TEM) images showed that the films consisted of packed grains with a mean grain size of approximately 25 nm. The resistivity of the La_0.7Sr_0.3MnO₃ films decreased rapidly as the annealing temperature increased from 550 to 700 °C, and did not change greatly with increasing annealing temperature from 700 °C. The La_0.7Sr_0.3MnO₃ films annealed at 700 °C had a lower resistivity of 5.70×10^-4 Ω m.

Original language	English
Pages (from-to)	68-73
Number of pages	6
Journal	Journal of Crystal Growth
Volume	293
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.05.014
Publication status	Published - 2006 Jul 15

Keywords

A1. Crystal structure
A1. Microstructure
A1. X-ray diffraction
B1. Oxides
B1. Perovskites
B2. Electric materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2006.05.014

Cite this

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title = "Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method",

abstract = "Lanthanum strontium manganate (La0.7Sr0.3MnO3: LSMO) thin films were grown on SiO2/Si substrates by a metallo-organic decomposition method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that La0.7Sr0.3MnO3 films with a perovskite single phase could be obtained by annealing at 700 °C. Transmission electron microscopy (TEM) images showed that the films consisted of packed grains with a mean grain size of approximately 25 nm. The resistivity of the La0.7Sr0.3MnO3 films decreased rapidly as the annealing temperature increased from 550 to 700 °C, and did not change greatly with increasing annealing temperature from 700 °C. The La0.7Sr0.3MnO3 films annealed at 700 °C had a lower resistivity of 5.70×10-4 Ω m.",

keywords = "A1. Crystal structure, A1. Microstructure, A1. X-ray diffraction, B1. Oxides, B1. Perovskites, B2. Electric materials",

author = "Wang, {Zhan Jie} and Hirokazu Usuki and Toshihide Kumagai and Hiroyuki Kokawa",

year = "2006",

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T1 - Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method

AU - Wang, Zhan Jie

AU - Usuki, Hirokazu

AU - Kumagai, Toshihide

AU - Kokawa, Hiroyuki

PY - 2006/7/15

Y1 - 2006/7/15

N2 - Lanthanum strontium manganate (La0.7Sr0.3MnO3: LSMO) thin films were grown on SiO2/Si substrates by a metallo-organic decomposition method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that La0.7Sr0.3MnO3 films with a perovskite single phase could be obtained by annealing at 700 °C. Transmission electron microscopy (TEM) images showed that the films consisted of packed grains with a mean grain size of approximately 25 nm. The resistivity of the La0.7Sr0.3MnO3 films decreased rapidly as the annealing temperature increased from 550 to 700 °C, and did not change greatly with increasing annealing temperature from 700 °C. The La0.7Sr0.3MnO3 films annealed at 700 °C had a lower resistivity of 5.70×10-4 Ω m.

AB - Lanthanum strontium manganate (La0.7Sr0.3MnO3: LSMO) thin films were grown on SiO2/Si substrates by a metallo-organic decomposition method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that La0.7Sr0.3MnO3 films with a perovskite single phase could be obtained by annealing at 700 °C. Transmission electron microscopy (TEM) images showed that the films consisted of packed grains with a mean grain size of approximately 25 nm. The resistivity of the La0.7Sr0.3MnO3 films decreased rapidly as the annealing temperature increased from 550 to 700 °C, and did not change greatly with increasing annealing temperature from 700 °C. The La0.7Sr0.3MnO3 films annealed at 700 °C had a lower resistivity of 5.70×10-4 Ω m.

KW - A1. Crystal structure

KW - A1. Microstructure

KW - A1. X-ray diffraction

KW - B1. Oxides

KW - B1. Perovskites

KW - B2. Electric materials

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