Microstructure and electrical conductivity of BaRuO3 thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


BaRuO3 (BRO) thin films were prepared by laser ablation at substrate temperature (Tsub) ranging from room temperature to 973 K in a high vacuum (10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at PO2 = 13 Pa and Tsub > 773 K. BaRu 6O12 was co-deposited with BRO at P = 10-6 Pa and Tsub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with Tsub and PO2. Highly conductive (σ > 104 S·m-1) BRO thin films showed metallic conduction whereas less conductive (σ < 10 4 S·m-1) BRO thin films showed semiconducting behavior. BRO thin film prepared at PO2 = 13 Pa and Tsub = 773K exhibited a maximum σ of 7.7 × 104 S·m -1 at room temperature.

Original languageEnglish
Pages (from-to)2953-2959
Number of pages7
JournalMaterials Transactions
Issue number11
Publication statusPublished - 2007 Nov


  • Barium ruthenate
  • Conductive oxide
  • Electrical conductivity
  • Laser ablation
  • Microstructure
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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