Microstructure and electrical conductivity of BaRuO3 thin films prepared by laser ablation

Akihiko Ito; Hiroshi Masumoto; Takashi Goto

doi:10.2320/matertrans.MRA2007117

Microstructure and electrical conductivity of BaRuO₃ thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

Advanced Interdisciplinary Research Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

BaRuO₃ (BRO) thin films were prepared by laser ablation at substrate temperature (T_sub) ranging from room temperature to 973 K in a high vacuum (10^-6 Pa) and in O₂ at oxygen pressures (P_O2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at P_O2 = 13 Pa and T_sub > 773 K. BaRu ₆O₁₂ was co-deposited with BRO at P = 10^-6 Pa and T_sub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with T_sub and P_O2. Highly conductive (σ > 10⁴ S·m^-1) BRO thin films showed metallic conduction whereas less conductive (σ < 10 ⁴ S·m^-1) BRO thin films showed semiconducting behavior. BRO thin film prepared at P_O2 = 13 Pa and T_sub = 773K exhibited a maximum σ of 7.7 × 10⁴ S·m ^-1 at room temperature.

Original language	English
Pages (from-to)	2953-2959
Number of pages	7
Journal	Materials Transactions
Volume	48
Issue number	11
DOIs	https://doi.org/10.2320/matertrans.MRA2007117
Publication status	Published - 2007 Nov

Keywords

Barium ruthenate
Conductive oxide
Electrical conductivity
Laser ablation
Microstructure
Thin films

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.2320/matertrans.MRA2007117

Cite this

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title = "Microstructure and electrical conductivity of BaRuO3 thin films prepared by laser ablation",

abstract = "BaRuO3 (BRO) thin films were prepared by laser ablation at substrate temperature (Tsub) ranging from room temperature to 973 K in a high vacuum (10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at PO2 = 13 Pa and Tsub > 773 K. BaRu 6O12 was co-deposited with BRO at P = 10-6 Pa and Tsub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with Tsub and PO2. Highly conductive (σ > 104 S·m-1) BRO thin films showed metallic conduction whereas less conductive (σ < 10 4 S·m-1) BRO thin films showed semiconducting behavior. BRO thin film prepared at PO2 = 13 Pa and Tsub = 773K exhibited a maximum σ of 7.7 × 104 S·m -1 at room temperature.",

keywords = "Barium ruthenate, Conductive oxide, Electrical conductivity, Laser ablation, Microstructure, Thin films",

author = "Akihiko Ito and Hiroshi Masumoto and Takashi Goto",

year = "2007",

month = nov,

doi = "10.2320/matertrans.MRA2007117",

language = "English",

volume = "48",

pages = "2953--2959",

journal = "Materials Transactions",

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publisher = "Japan Institute of Metals (JIM)",

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T1 - Microstructure and electrical conductivity of BaRuO3 thin films prepared by laser ablation

AU - Ito, Akihiko

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2007/11

Y1 - 2007/11

N2 - BaRuO3 (BRO) thin films were prepared by laser ablation at substrate temperature (Tsub) ranging from room temperature to 973 K in a high vacuum (10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at PO2 = 13 Pa and Tsub > 773 K. BaRu 6O12 was co-deposited with BRO at P = 10-6 Pa and Tsub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with Tsub and PO2. Highly conductive (σ > 104 S·m-1) BRO thin films showed metallic conduction whereas less conductive (σ < 10 4 S·m-1) BRO thin films showed semiconducting behavior. BRO thin film prepared at PO2 = 13 Pa and Tsub = 773K exhibited a maximum σ of 7.7 × 104 S·m -1 at room temperature.

AB - BaRuO3 (BRO) thin films were prepared by laser ablation at substrate temperature (Tsub) ranging from room temperature to 973 K in a high vacuum (10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at PO2 = 13 Pa and Tsub > 773 K. BaRu 6O12 was co-deposited with BRO at P = 10-6 Pa and Tsub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with Tsub and PO2. Highly conductive (σ > 104 S·m-1) BRO thin films showed metallic conduction whereas less conductive (σ < 10 4 S·m-1) BRO thin films showed semiconducting behavior. BRO thin film prepared at PO2 = 13 Pa and Tsub = 773K exhibited a maximum σ of 7.7 × 104 S·m -1 at room temperature.

KW - Barium ruthenate

KW - Conductive oxide

KW - Electrical conductivity

KW - Laser ablation

KW - Microstructure

KW - Thin films

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