Microstructure and composition of Au/Si3N4 model interface

Hiroshi Suzuki, Kyoko Yonemitsu, Tomohiro Saito, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review


    An Au/Si3N4 interface was obtained by vapor deposition of Au on a Si3N4 substrate in vacuum, both at room temperature and 600°C. The interface structure and chemical composition were investigated by high resolution and analytical electron microscopy. A damaged phase was observed between Au and Si3N4 crystals. The thickness of this phase increased when the substrate surface was polished or the substrate was heated. This phase was found to be amorphous and merely composed of Si and N.

    Original languageEnglish
    Pages (from-to)1193-1195
    Number of pages3
    JournalJournal of the Ceramic Society of Japan
    Issue number12
    Publication statusPublished - 1999


    • Gold
    • High resolution electron microscopy
    • Interface structure
    • Silicon nitride

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry


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